Publications & Presentations

Melisa Buie and Nick Shelton “Data Doesn’t Speak for Itself: Introducing the Ultimate Lean Data Tool” presented at the Association for Manufacturing Excellence 2020 Conference.

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Collard, S. Anderson, R. Anderson, M. Halim, C. B. Brooks, M. Buie, T. Sahin, “Examination of Various Endpoint Methods for Chrome Mask Etch”, in 23rd Annual BACUS Symposium on Photomask Technology, Kurt Kimmell and Wolfgang Straud, Editors, Proceedings of SPIE Vol. 5256, 744-748 (2003).

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Sahin, C. Collard, S. Anderson, A. Mak, C. B. Brooks, M. Buie, P. Walsh, G. Li, “Integrated Phase Shift Measurement for Advanced Mask Etch Process Control”, in 23rd Annual BACUS Symposium on Photomask Technology, Kurt Kimmell and Wolfgang Straud, Editors, Proceedings of SPIE Vol. 5256, 77-84 (2003).

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Hammond, J. O. Clevenger, M. Buie, “Plasma and Flow Modeling of Photomask Etch Chambers” in 23rd Annual BACUS Symposium on Photomask Technology, Kurt Kimmell and Wolfgang Straud, Editors, Proceedings of SPIE Vol. 5256, 713-723 (2003).

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Anderson, R. Anderson, M. Buie, M. Chandrachood, J. Clevenger, Y. Lee, N. Sandlin, “Optimization of a 65nm Alternating Phase Shift Quartz Etch Process”, in 23rd Annual BACUS Symposium on Photomask Technology, Kurt Kimmell and Wolfgang Straud, Editors, Proceedings of SPIE Vol. 5256, 66-75 (2003).

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C.B. Brooks, S. Anderson, R. Anderson, C. Collard, J. Clevenger, N. Sandlin, and M. Buie, “Optical Emission Endpoint Optimization in the TetraTM Etch Chamber for Production of Embedded Phase Shift Masks” in 19th European Mask Conference on Mask Technology for Integrated Circuits and Micro-Components, Uwe Behringer, Editor, 121-129, (2003).

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Anderson, G. Ruhl, P.Nesladek, G. Prechtl, W. Sabisch, A. Kersch, M.Buie, “Improvement of Chrome CDU by Optimizing Focus Ring Design” in Photomask Japan Symposium on Photomask and Next-Generation Lithography Mask Technology X, Hiroyoshi Tanabe, Editor, Proceedings of SPIE Vol. 5130, 264-274 (2003).

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O. Clevenger, N. A. Sandlin, and M. Buie, “Effect of Chamber Seasoning on the Dry Etch Process.” in Photomask Japan Symposium on Photomask and Next-Generation Lithography Mask Technology X, Hiroyoshi Tanabe, Editor, Proceedings of SPIE Vol. 5130, 92-100 (2003).

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Brooks, M. Buie, N. Waheed, P. Martin, P. Walsh, and G. Evans, “Process Monitoring of Etched Fused Silica Phase Shift Masks”, in 22nd Annual BACUS Symposium on Photomask Technology, Brian J. Grenon, Kurt R. Kimmel, Editors, Proceedings of SPIE Vol. 4889, 25-31 (2002).

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Anderson, G. Ruhl, N. Sandlin, M. Buie, “Study of the Role of Cl2, O2, and He in the Chrome Etch Process with Optical Emission Spectroscopy”, in 22nd Annual BACUS Symposium on Photomask Technology, Brian J. Grenon, Kurt R. Kimmel, Editors, Proceedings of SPIE Vol. 4889, 641-662 (2002).

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Lu, N. Sandlin, H. Sato, C. Lu, N. Cheng, T. Huang, C. Su, and M. Buie, “Advanced CD Linearity Improvement for Multi-Project Wafers and SoC at 95 nm Technology Node”, in 22nd Annual BACUS Symposium on Photomask Technology; Brian J. Grenon, Kurt R. Kimmel, Editors, Proceedings of SPIE Vol. 4889, 800-808 (2002).

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Anderson, N. Sandlin, M. J. Buie, and B. Stoehr, “Characterizing Tetra Cr etch with Optical Emission Spectroscopy”, Engineering Technology Conference, Applied Materials-Santa Clara, 2002.

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Anderson, N. Sandlin, M. Buie, A. Agarwal, C. Brooks, Y. Huang, and B. Stoehr, “In-Situ Optical Emission Spectroscopic Examination of Chrome Etch for Photomasks”, in Photomask Japan Symposium on Photomask and Next-Generation Lithography Mask Technology IX, Hiroichi Kawahira, Editor, Proceedings of SPIE Vol. 4754, 312-322, (2002).

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Buxbaum, M. Buie, B. Stoehr, W. Montgomery, S. Fuller, "Characterization of an integrated multibeam laser mask-pattern generation and dry-etch processing total solution", in 21st Annual BACUS Symposium on Photomask Technology, Giang T. Dao, Brian J. Grenon, Editors, Proceedings of SPIE Vol. 4562, 338-352, (2002).

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Buie, B. C. Stoehr and Y-C Huang, “Chrome Etch for <0.13 µm Advanced Reticle Production,” in 21st Annual BACUS Symposium on Photomask Technology, Giang T. Dao, Brian J. Grenon, Editors, Proceedings of SPIE Vol. 4562, 633-640, (2002).

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Buie, B. C. Stoehr, A. Buxbaum, G. Ruhl, “An Endpoint Solution for Photomask Chrome Loads Down to 0.25%,” in 21st Annual BACUS Symposium on Photomask Technology, Giang T. Dao, Brian J. Grenon, Editors, Proceedings of SPIE Vol. 4562, 617-623, (2002).

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Y-C Huang, M. Buie, B. C. Stoehr, A. Buxbaum, and G. Ruhl, “Extended Chamber Matching and Repeatability Study for Chrome Etch”, in 21st Annual BACUS Symposium on Photomask Technology, Giang T. Dao, Brian J. Grenon, Editors, Proceedings of SPIE Vol. 4562, 624-632, (2002).

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“Using Simulation for Matrix Determination in Process Characterization” F. Khorasani and M. J. Buie, Sematech Statistical Processes Conference, Austin, TX, 1998.

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“Characterization of the Etch Rate Non-uniformity in a Magnetically Enhanced Reactive Ion Etcher” M. J. Buie, J. T. Pender, M. Dahimene, J. Vac. Sci. Technol. A, 16(3), 1464, June 1998.

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“Surface Damage Characterization in a MERIE” M. J. Buie, K. Vaidya, A. Joshi, T. Sambei, Plasma Processing, edited by G. Mathad and M. Meyyappan, Vol. PV-97, The Electrochemical Society, Pennington, NJ (1997).

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“Loading and Scale-up of Plasma Etching Reactors with Complex Chemistries” M. J. Buie, J. T. P. Pender, P. L. G. Ventzek, Process Control, Diagnostics and Modeling in Semiconductor Manufacturing, edited by M. Meyyappan, D. J. Economou, and S. W. Butler, Vol. PV97-9, The Electrochemical Society, Pennington, NJ (1997).

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“Removing Plasma Induced Surface Damage” C. B. Brooks, M. J. Buie, and K. Vaidya, J. Vac. Sci. Technol. A, 16(1), 260, Jan/Feb 1998.

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“A Method for Identifying Lag and Loading”, M. J. Buie, J. T. P. Pender and P. L. G. Ventzek, Jap. J. Appl. Phys., 36 7B, 4838, July, 1997.

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“The Role of N2 in Oxide Etch”, M. J. Buie, A. M. Joshi, and J. Regis, J. Electrochem. Soc., 144(11), 3935, Nov. 1997.

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“Plasma Process Induced Surface Damage Removal”, C. B. Brooks, M. J. Buie, and K. Vaidya, Basic Aspects of Nonequilibrium Plasmas Interacting With Surfaces Conference, Shirahama, Japan, January 26-27, 1997.

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“RIE Lag and Loading in the MxP+”, M. J. Buie, J. T. P. Pender, and P. L. G. Ventzek, Presented to the International Conference on Reactive Plamsas, Nara, Japan, January 21-24, 1997.

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“Optical Emssion Spectroscopy as a Baseline Uniformity Sensor”, M. J. Buie, L. Poslavsky, J. Lewis, and M. Welch, Presented to the Applied Materials International Engineering Technology Conference, Banff, Canada, May, 1996.

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“Optimization of a Highly Uniform Etch Process for Photoresist Etchback”, M. J. Buie and F. Khorasani, Presented to the Applied Materials Process Support Engineering Conference, Las Vegas, NV, April, 1996.

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“Reducing RIE Lag with Chemistry”, M. J. Buie, A. Joshi, and J. Regis, Plasma Processing, edited by G. Mathad and M. Meyyappan, Vol. PV96, pp. 469, The Electrochemical Society, Pennington, NJ (1996).

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“Abel Inversion Applied to Experimental Spectroscopic Data with Off-Axis Peaks”, M. J. Buie, J. T. P. Pender, J. P. Holloway, T. Vincent, P. L. G. Ventzek, and M. L. Brake, J. Quant. Spectrosc. Radiat. Transfer, Vol. 55, pp. 231-243, 1996.

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"In Situ Sensor for Species Concentration", M. J. Buie, J. T. P. Pender, M. Elta and M. L. Brake, IEEE Trans. on Plasma Sci., Vol. 24, pp. 111, 1996.

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"Reactive Ion Etching in the GEC Reference Cell", M. L. Brake, J. T. P. Pender, M. J. Buie, A. Ricci and J. Soniker, P.D. Pochan and P. A. Miller, J. Nat. Inst. of Standards and Technol., Vol. 100, pp. 441, 1995.

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"In Situ Diagnostic for Etch Uniformity", M. J. Buie, J. T. Pender, J. Soniker, M. Elta, and M. L. Brake, J. Vac. Sci. Technol. A, 13, 1930, 1995.

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“Optical emission spectroscopy on the GEC reference cell”, M. J. Buie, J. T. Pender, T. Vincent, J. Holloway, M. Brake, and M. Elta, Microelectronics Processes, Sensors, and Controls, Vol. 2091, pp. 211-217, Society of Photo-Optical Instrumentation Engineers, Bellingham, WA (1993).

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“Radial optical emission profiles of radio-frequency glow discharges”, J. Pender, M. Buie, T. Vincent, J. Holloway, M. Elta, and M. Brake, J. Appl. Phys. 74, 3590 (1993).

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"Analysis of Pumping Mechanisms Affecting the gain of the J=0-1 and J=2-1 lines in neonlike selenium", A. Dasgupta, K. G. Whitney, M. Blaha, and M. Buie, Phys. Rev. A, 46 5973, (1992).

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"Achievable Pump Power and Gain in the Al XI - Mg IX Photoresonant X-Ray Laser", J. P. Apruzese and M. J. BuieJ. Appl. Phys., 70 1957, (1991).

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"Experimental and Theoritical Cross Sections for Electron-Impact Ionization of Ti5+", S. Chantrenne, D. C. Gregory, M. J. Buie, and M. S. Pindzola,  Phys. Rev. A, 41 140, (1990).

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"Electron Impact Ionization of Uranium Atomic Ions," M.S. Pindzola and M. J. Buie, Phys. Rev. A, 39 1029, (1989).

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"Electron-Impact Ionization Data for the Ni Isonuclear Sequence", M. S. Pindzola, D. C. Griffin, M. J. Buie, C. Bottcher and H. T. Hunter, ORNL/TM, 1988.

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"Fully Relativistic Electron-Impact Ionization of Atomic Ions", M. S. Pindzola, M. J. Buie, and D. C. Griffin, Phys. Rev. A, 37 3232, (1988).

Patents

“Method and Apparatus for Measuring Etch Uniformity of a Semiconductor”, M. J. Buie, L. Poslavsky, and J. Lewis, U.S. Patent Number: 6,649,075, European Patent EP0821396.

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“A Method and Apparatus for Etching Metal Layers on Substrates”, M.J. Buie, B. Stoehr, G. Ruhl; German Patent DE10146935A1.

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“A Method and Apparatus for Etching Photomasks”, M. Buie, B. Stoehr, M. Welch; US Patent Number: 7115523, European Patent EP1290495.

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“Etch Process for Photolithographic Reticle Manufacturing with Improved Etch Bais” M. J. Buie, B. Stoehr and G. Ruhl, U.S. Patent Application 20030003374, Jan. 2003.

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“Methods and Apparatus for Etching Metal Layers on Substrates”, M. J. Buie and B. Stoehr, US Patent Number: 7018934.

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“Methods for Etching Photolithographic Reticles” T. Coleman, Y. Huang, M. Buie, L. Sheu, B. Stoehr and P. Jones, U. S. Patent Application 20040072081.

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“Multi-step process for etching photomasks” C. B. Brooks, M. J. Buie and B. Stoehr, US Patent Number: 7371485.

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“Integrated Phase Angle and Optical Critical Dimension Measurement Metrology for Feed-forward and Feedback Process Control” A. Mak, Y. Lee, C. Brooks, M. Buie, T. Sahin, and J. Ding, US Patent Number: 7250309.

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“Wireless Instrumented Photomask Substrate For Measuring Process Characteristics in Plasma Processing Environments” M. Buie and L. J. Mahoney, Invention Disclosure 2005.